Author(s)

Chen Liu ¹

Affiliation(s)

¹ Nanjing University of Science and Technology, Xiaolingwei, Nanjing, China

Corresponding Author

ABSTRACT

The simple two-terminal metal-insulator-metal (MIM) structures of memristors make them capable of being integrated into dense crossbar arrays [1, 2]. As shown in Figure 1, a typical crossbar array consists of parallel metal lines, termed word lines and bit lines, respectively, as the top and bottom electrodes that are perpendicular to each other. The bidirectional memory is connected between the word line and the bit line. During the read process, the extra current generated by the natural path represented by the red solid line can reduce the energy consumption of the unselected unit, thus reducing the read mosaic and limiting the size of the array. In order to independently control the read/write operations of each memory unit in the array, the 1T1R structure is proposed.

KEYWORDS

CITE THIS PAPER

Chen Liu, Hardware Implementation of Artificial Synapses. Journal of Electronics and Information Science (2023) Vol. 8: 33-37. DOI: http://dx.doi.org/10.23977/10.23977/jeis.2023.080206.

REFERENCES

[1] Strukov D B, Kohlstedt H., "Resistive switching phenomena in thin films: Materials, devices, and applications." MRS bulletin 37.2 (2012): 108-114.
[2] Ha S D, Ramanathan S., "Adaptive oxide electronics: A review." Journal of applied physics 110.7 (2011): 14.
[3] Ma H., Feng J., Lv H. et al., "Self-rectifying resistive switching memory with ultralow switching current in Pt/Ta2O5/HfO2-x/Hf stack." Nanoscale Research Letters 12.1 (2017): 1-6
[4] Chen HY., Brivio S., Chang CC. et al., "Resistive random access memory (RRAM) technology: from material, device, selector, 3D integration to bottom-up fabrication." Journal of Electroceramics 39.1 (2017): 21-38.
[5] Shi L, Zheng G, Tian B, et al., "Research progress on solutions to the sneak path issue in memristor crossbar arrays." Nanoscale Advances 2.5 (2020): 1811-1827. 
[6] Wang Z, Rao M, Midya R, et al., "Threshold switching of Ag or Cu in dielectrics: materials, mechanism, and applications." Advanced Functional Materials 28.6 (2018): 1704862. 

Sponsors, Associates, and Links

• Information Systems and Signal Processing Journal
  
  
• Intelligent Robots and Systems
  
  
• Journal of Image, Video and Signals
  
  
• Transactions on Real-Time and Embedded Systems
  
  
• Journal of Electromagnetic Interference and Compatibility
  
  
• Acoustics, Speech and Signal Processing
  
  
• Journal of Power Electronics, Machines and Drives
  
  
• Journal of Electro Optics and Lasers
  
  
• Journal of Integrated Circuits Design and Test
  
  
• Journal of Ultrasonics
  
  
• Antennas and Propagation
  
  
• Optical Communications
  
  
• Solid-State Circuits and Systems-on-a-Chip
  
  
• Field-Programmable Gate Arrays
  
  
• Vehicular Electronics and Safety
  
  
• Optical Fiber Sensor and Communication
  
  
• Journal of Low Power Electronics and Design
  
  
• Infrared and Millimeter Wave
  
  
• Detection Technology and Automation Equipment
  
  
• Journal of Radio and Wireless
  
  
• Journal of Microwave and Terahertz Engineering
  
  
• Journal of Communication, Control and Computing
  
  
• International Journal of Surveying and Mapping
  
  
• Information Retrieval, Systems and Services
  
  
• Journal of Biometrics, Identity and Security
  
  
• Journal of Avionics, Radar and Sonar