Design and Characterize the GaN/AlGaN Asymmetrical Super-lattice Exotic pin Photo-Sensor in Visible Wavelength
DOI: 10.23977/jptc.2019.21008 | Downloads: 37 | Views: 2940
Abhijit Kundu 1, Debraj Modak 2, Jhuma Kundu 3, Moumita.Mukherjee 4
1 Govt.Engg.College, Chaibasa, Jharkhand, India
2 Abacus inst. of Engg. & Management, Mogra, India
3 NSHM Knowledge Campus, Durgapur, India
4 Adamas University, Kolkata, India
Corresponding AuthorAbhijit Kundu
In this paper, the super-lattice GaN/AlGaN single and array type photo sensor has been designed and simulated through the Quantum Modified Drift-Diffusion (QMDD) simulator in visible wavelength region (300nm-800nm). The photo sensor has been demonstrated with significant photo responsibility and quantum efficiency and the result of single photo sensor are compared with its array type photo sensor in between 300nm-800 nm wavelength region. To the best of author’s knowledge, this is the first report on GaN/AlGaN super-lattice photo sensor in visible wavelength of optical illumination.
KEYWORDSGaN/AlGaN, super-lattice, QMDD, Quantum Efficiency.
CITE THIS PAPER
Abhijit Kundu, Debraj Modak, Jhuma Kundu, Moumita.Mukherjee, Design and Characterize the GaN/AlGaN Asymmetrical Super-lattice Exotic pin Photo-Sensor in Visible Wavelength, Journal of Physics Through Computation (2019) Vol. 2: 37-40. DOI: http://dx.doi.org/10.23977/jptc.2019.21008.
 Meiyong Liao, Jose Alvarez1 and Yasuo Koide. (2005) Thermal Stability of Diamond Photodiodes Using Tungsten Carbide as Schottky, J. Appl. Phys., Part 1, 44, 7832 . https://doi.org/10.1143/JJAP.44.7832, Google Scholar Crossref, CAS.
 R.B. Campbell, Hung-Chi Chang (1966), Detection of ultraviolet radiation using silicon carbide P-N junctions. Doi: 10.1109/IEDM.1966.187651.
 Zimmermann, Professor Dr. Horst, Silicon Technologies and Integrated Photo detectors, Springer, New York, 29-153.
 W. von Muench ; C. Gessert ; M.E. Koeniger; Photo Diodes and junction field-effect transistor with high UV sensitivity. doi: 10.1109/T-ED.1976.18579.
 I.A. Khan and J. A. Cooper,(1998) Measurement of High Field Electron Transport in Silicon Carbide, Materials Science Forum, 264-268, 509-512, https://www.scientific.net/MSF.264-268.509
 Giampiero de Cesare, Augusto Nascetti, and Domenico Caputo, (2015) Amorphous Silicon p-i-n Structure Acting as Light andTemperature Sensor,12260-12272. doi: 10.3390/s150612260
 Abhijit Kundu, Saikat Adhikari, Arnima Das, Maitreyi Ray Kanjilal, Moumita Mukherjee,(2018), Design and characterization of asymmetrical super-lattice Si/4H-SiC pin photo diode array: a potential opto-sensor for future applications in bio-medical domain, Microsystem Technologies.