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  4. Vol 2, Issue 1, 2019

Design & Analysis of a Terahertz Power Source for a Non-invasive, Non-ionizing Imaging of Full Body Prosthetics: A Novel Technique

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DOI: 10.23977/jptc.2019.21003 | Downloads: 27 | Views: 3226

Author(s)

Saikat Adhikari 1, John LaRocco 2, Rajdeepta Saha 3, Moumita Mukherjee 1

Affiliation(s)

1 Adamas University, Kolkata, India
2 Volunteer Researcher, Singapore, Singapore
3 Camellia Institute of Engineering and Technology, MAKAUT, India

Corresponding Author

Saikat Adhikari

ABSTRACT

The authors have designed and studied the superlattice terahertz device for accurate detection of cancer cell in a Full Body Prosthetic (FBP). For this a generalized non-linear simulator is developed. The model predicts that identification of cancerous cell within FBP could be done satisfactorily by analyzing corresponding thermographs. For T-Ray source and detector the authors have considered p++ -n- - n - n++ type Mixed Tunneling Avalanche Transit Time (MITATT) Device at 0.1 THz. The study reveals that the proposed device is capable of developing 10 W level of fundamental harmonic power at around 100 GHz. The simulator incorporates the physical and electrical properties of GaN/AlN supperlatice, which include temperature and field dependent carrier ionization rates, saturation velocity of charge carriers, mobility, inter-sub band tunneling and drift velocity overshoot effects as well as hot carrier effects inter-band scattering of electron hole pairs in superlattice region. An equivalent circuit model is developed and analyzed for obtaining impedance and admittance characteristics.  To the best of authors’ knowledge this is the first report on large signal modeling of THz Solid State imaging unit for thermo graphic analysis of malignant tumors in Full Body Prosthetics (FBP).

KEYWORDS

FBP, Solid State T-Ray Source, Non Linear large signal analysis, GaN/AlN Superlattice, Room Temperature T-Ray Radiation System, Radiation Thermographs.

CITE THIS PAPER

Saikat Adhikari, John LaRocco, Rajdeepta Saha and Moumita Mukherjee, Design & Analysis of a Terahertz Power Source for a Non-invasive, Non-ionizing Imaging of Full Body Prosthetics: A Novel Technique, Journal of Physics Through Computation (2019) Vol. 2: 9-16. DOI: http://dx.doi.org/10.23977/jptc.2019.21003.

REFERENCES

[1] Mukherjee, M.,  Mazumdar, N.,  and Roy, S.K., Semiconductor Science and Technology (2007) GaN IMPATT diode: a photo-sensitive high power terahertz source, 22,1258.
[2] Mukherjee, M., Mazumdar, N., and Roy, S.K., IEEE Trans Device and Materials Reliability (2008) Photosensitivity analysis of gallium nitride and silicon carbide terahertz IMPATT oscillators: comparison of theoretical reliability and study on experimental feasibility, 8, 608-620.
[3] Kundu, A., Adhikari, S., Das, A., Ray, M., and Mukherjee, M., Microsystem Technologies (2018) Design and characterisation of asymetrical superlattice Si/4H-SiC pin photo-diode array: a potential opto-sensor for future applications in biomedical domain, DOI 10.1007/s00542-018-4119-4.
[4] NSM Archive, NSM Archive - Physical Properties of Semiconductors, www.ioffe.ru/SVA/NSM/Semicond/
[5] George, T., Rufus, E., Alex, Z.C., ARPN Journal of Engineering and Applied Sciences (2015) Simulation of microwave induced thermo-accoustical imaging technique for cancer detection, 10.

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