Author(s)

Qiang Li ¹

Affiliation(s)

¹ Anhui Guangzhi Technology Co, Chuzhou, Anhui, China

Corresponding Author

Qiang Li

ABSTRACT

A highly selective corrosion solution has been developed, capable of completely dissolving the GaSb substrate of InAsSb focal plane devices. This solution effectively mitigates the absorption of infrared radiation and the detrimental effects associated with the mechanical thinning of the focal plane device substrate. The study focused on the CrO₃ series, wherein the concentrations of CrO₃ and H₃PO₄ in the solution were systematically varied to assess their impact on the corrosion of InAsSb and GaSb materials. The extent of corrosion was quantitatively evaluated using a step meter and a 3D profilometer. The experimental results yielded an optimal solution ratio, resulting in a corrosion rate of 173 nm/s for GaSb, while InAsSb exhibited negligible corrosion. The surface roughness of GaSb was reduced from S_a = 1.2853 nm prior to corrosion to S_a = 1.0679 nm following treatment with the optimal solution ratio. Subsequent to packaging, the focal plane chip was tested at a temperature of 150K, revealing that the corrosion process effectively eliminated surface damage. The average response voltage recorded for the device was 553 mV, with an average noise equivalent temperature difference (NETD) of 20.98 mK. Notably, the performance of the focal plane device remained unaffected post-corrosion. This research holds significant implications for the advancement of back corrosion technology in InAsSb focal plane devices.

KEYWORDS

InAsSb; GaSb substrate; Backside corrosion

CITE THIS PAPER

Qiang Li, Study on wet corrosion removal of InAsSb focal plane device substrate. Analytical Chemistry: A Journal (2024) Vol. 3: 72-79. DOI: http://dx.doi.org/10.23977/analc.2024.030112.

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