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Analysis of electric field defect problems based on IGBT modules

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DOI: 10.23977/jeeem.2024.070307 | Downloads: 3 | Views: 185

Author(s)

Zikang He 1, Fei Wu 2

Affiliation(s)

1 School of Electrical Engineering, Tongda College of Nanjing University of Posts and Telecommunications, Yangzhou, 225100, China
2 School of Electrical Engineering, Xinjiang University, Urumqi, 830049, China

Corresponding Author

Fei Wu

ABSTRACT

With the development of new power systems, IGBT has been more widely used in rail transit, new energy vehicles, photovoltaic power generation and other fields. The high efficiency and reliability of electrical insulation have received widespread attention. In this paper, in order to solve the problem of defects in the use of IGBT chips in the electrostatic field, the IGBT electrostatic field simulation model was constructed in COMSOL through the finite element method, and the results of different defects were explored through the electric field distributions presented in the simulation results. It is concluded that voids, bubbles, and metal protrusion defects all have an effect on the electric field distribution at the triple bonding point, and the field strength inside the defects is greater. Meanwhile, the corresponding data base is also provided for the device design of IGBT.

KEYWORDS

Insulated gate bipolar transistor (IGBT), electrostatic field simulation, triple junction, defect problem

CITE THIS PAPER

Zikang He, Fei Wu, Analysis of electric field defect problems based on IGBT modules. Journal of Electrotechnology, Electrical Engineering and Management (2024) Vol. 7: 53-63. DOI: http://dx.doi.org/10.23977/jeeem.2024.070307.

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